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download 2n2907 datasheet pdf

2N2906
2N2907
2N2906A
2N2907A
PNP SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2906, 2N2907
series types are silicon PNP epitaxial planar transistors
designed for small signal, general purpose switching
applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
ΘJA
ΘJC
2N2906
2N2907
60
40
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N2906
2N2907
SYMBOL
TEST CONDITIONS
MIN
MAX
ICBO
VCB=50V
20
ICBO
VCB=50V, TA=150°C
20
ICEV
VCE=30V, VEB=0.5V
50
BVCBO
IC=10μA
60
BVCEO
IC=10mA
40
BVEBO
IE=10μA
5.0
VCE(SAT)
IC=150mA, IB=15mA
0.4
VCE(SAT)
IC=500mA, IB=50mA
1.6
VBE(SAT)
IC=150mA, IB=15mA
1.3
VBE(SAT)
IC=500mA, IB=50mA
2.6
fT
VCE=20V, IC=50mA, f=100MHz
200
Cob
VCB=10V, IE=0, f=1.0MHz
8.0
Cib
VEB=2.0V, IC=0, f=1.0MHz
30
ton
VCC=30V, IC=150mA, IB1=15mA
45
toff
VCC=6.0V, IC=150mA, IB1=IB2=15mA
100
2N2906A
2N2907A
60
60
5.0
600
400
1.8
-65 to +200
438
97