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download 2n4092 datasheet pdf

8/2014
2N4091, 2N4092, 2N4093
N-Channel Silicon Junction Field-Effect Transistor



Absolute maximum ratings at TA = 25oC
Low rDS(on)
Reverse Gate Source & Gate Drain Voltage
-40V
Continuous Forward Gate Current
10 mA
Continuous Device Power Dissipation
300 mW
Power Derating
1.7 mW/oC
Storage Temperature Range
-65oC to +150oC
ID(off) < 100 pA
Fast Switching
At 25oC free air temperature
Static Electrical Characteristics
Gate Source Breakdown
V(BR)GSS
Voltage
Gate Reverse Current
IGSS
2N4091
Min Max
2N4092
Min Max
2N4093
Min Max
-40
-40
-40
200
Gate Source Cutoff Voltage
VGS(OFF)
-5
Drain Saturation Current
(pulsed)
IDSS
30
-10
200
-2
-7
15
-1
Process NJ132
Unit
Test Conditions
V
IG = -1 uA, VDS = 0 V
200
pA
VGS = -10 V, VDS = 0 V
-5
V
VDS = 10 V, VGS = 0 V
mA
VDS = 10 V, VGS = 0 V
5
Dynamic Electrical Characteristics
Drain -Source On Resistance
rds(on)
30
50
80
Ω
Common-Source Input
Capacitance
Ciss
16
16
16
pF
Common-Source Reverse
Transfer Capacitance
Crss
5
5
5
pF
VDS = 10 V, ID = 5 mA
Turn-On Delay Time
td
15
15
20
nS
VDD = 10 V, VGS(on) = 0V
Rise Time
tr
toff
10
20
40
nS