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APM4953
Dual P-Channel Enhancement Mode Mosfet
Applications
Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems
Features
-30V/-4.9A, RDS(on)=53mΩ(typ.)@VGS=-10V
RDS(on)=53mΩ(typ.)@VGS=-4.5V
Supper High Density Cell Design
Reliable and Rugged
SO-8 Package
Pin Description
P-Channel Mosfet
SO-8
Ordering and Marking Information
Package Code
K: SO-8
Operation Junction Temp. Range
C:-55 to 150℃
Handling Code
TU: Tube
TR: Tape & Reel
XXXXX – Date Code
APM4953K:
Absolute Maximum Ratings (TA=25℃ unless otherwise noted)
Symbol
VDSS
VGSS
ID*
IDM
Parameter
Drain-Source Voltage
Gate-Source Voltage
Storage Temperature Range
Thermal Resistance – Junction to Ambient
Rating
-30
±25
-4.9
-30
Unit
V
Rating
Unit
TA=25℃
2.5
W
TA=100℃
1.0
A
* Surface Mounted on FR4 Board, t ≤10 sec.
Absolute Maximum Ratings (Cont.) (TA=25℃ unless otherwise noted)
Symbol
Parameter
PD
Maximum Power Dissipation
TJ
Maximum Junction Temperature
150
TSTG
Storage Temperature Range
-55 to 150
RQJA
Thermal Resistance – Junction to Ambient
50
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1

℃/W
APM4953
Dual P-Channel Enhancement Mode Mosfet
Electrical Characteristics (TA=25℃ unless otherwise noted)
Symbol
Parameter
Test Condition
Unit
APM4953
Min.
Typa.
Max
Static
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, IDS=-250µA
IDSS
Zero Gate Voltage Drain Current
VDS=-24V, VGS=0V
VGS(th)
Gate Threshold Voltage
VGS=VGS, IDS=-250µA
IGSS
Gate Leakage Current
VGS=±25V, VDS=0V
RDS(ON)
Drain-Source On-state
VGS=-10V, IDS=-4.9A
-30
V
-1
µA
-2