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BD909/911
BD910/912
®
COMPLEMENTARY SILICON POWER TRANSISTORS

STMicroelectronics PREFERRED
SALESTYPES
DESCRIPTION
The BD909 and BD911 are silicon Epitaxial-Base
NPN power transistors mounted in Jedec TO-220
plastic package. They are intented for use in
power linear and switching applications.
The complementary PNP types are BD910 and
BD912 respectively.
3
1
2
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
NPN
BD909
BD911
PNP
BD910
BD912
V CBO
Collector-Base Voltage (I E = 0)
80
100
V
V CEO
Collector-Emitter Voltage (I B = 0)
80
100
V
VEBO
Emitter-Base Voltage (I C = 0)
I E ,IC
Collector Current
IB
P tot
Tstg
Tj
Base Current
Total Dissipation at T c ≤ 25 C
Storage Temperature
o
Max. Operating Junction Temperature
5
V
15
A
5
A
90
W
-65 to 150
o
C
150
o
C
For PNP types voltage and current values are negative.
October 1999
1/6
BD909 / BD910 / BD911 / BD912
THERMAL DATA
R thj-case
Thermal Resistance Junction-case
Max
o
1.4
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
I CBO
Parameter
Collector Cut-off
Current (I E = 0)
Test Conditions
Typ.
Max.
Unit
for BD909/910
for BD911/912
T case = 150 o C
for BD909/910
for BD911/912
V CB = 80 V
V CB = 100 V
500
500
µA
µA
V CB = 80 V